The deposition of silicon nitride films under low pressure on wafers up to 200 mm
The influence of silicon nitride deposition condition on parameters of the obtained films has been investigated. It has been found that the deposition rate of silicon nitride films decreases with deposition temperature decreasing, and at the same time the within wafer thickness uniformity improves....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2012-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2012/6_2012/pdf/08.zip |