First-principles Study of Structural, Electronic and Optical Properties of III-arsenide Binary GaAs and InAs, and III-Nitrides Binary GaN and InN: Improved Density-functional-theory Study

First-principles Study of Structural, Electronic and Optical Properties of III-arsenide Binary GaAs and InAs, and III-Nitrides Binary GaN and InN: Improved Density-functional-theory Study

We report results from first-principles density functional calculations using the full- potential linear augmented plane wave (FP-LAPW) method. For the exchange-correlation potential, local-density approximation (LDA) and generalized gradient approximation of Wu and Cohen (GGA-WC) have been used to...

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Bibliographic Details
Main Authors: Mohamed Issam ZIANE, Zouaoui BENSAAD, Boutaleb LABDELLI, Hamza BENNACER
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
FP-LAPW calculations
Electronic structure
GGA-EV
MBJLDA
Optical properties.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_531.pdf

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http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_531.pdf

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