Frequency, delay and velocity analysis for intrinsic channel region of carbon nanotube field effect transistors
Gate wrap around field effect transistor is preferred for its good channel control. To study the high frequency behaviour of the device, parameters like cut-off frequency, transit or delay time, velocity are calculated and plotted. Double-walled and array of channels are considered in this work for...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Applied Science Innovations Private Limited
2014-03-01
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| Series: | Carbon: Science and Technology |
| Subjects: | |
| Online Access: | http://www.applied-science-innovations.com/cst-web-site/CST-6-2-2014/CST%20-%2091.pdf |
| Summary: | Gate wrap around field effect transistor is preferred for its good channel control. To study the high frequency behaviour of the device, parameters like cut-off frequency, transit or delay time, velocity are calculated and plotted. Double-walled and array of channels are considered in this work for enhanced output and impedance matching of the device with the measuring equipment terminal respectively. The perfomance of double-walledcarbon nanotube is compared with single-walled carbon nanotube and
found that the device with double-wall shows appreciable improvement in its characteristics. Analysis of these parameters are done with various values of source/drain length, gate length, tube diameters and channel densities. The maximum cut-off frequency is found to be 72.3 THz with corresponding velocity
as 5x106 m/s for channel density as 3 and gate length as 11nm. The number of channel is varied from 3 to 21 and found that the perfromance of the device containing double-walled carbon nano tube is better for channel number lesser than or equal to 12. The proposed modelling can be used for designing devices to handle high speed applications of future generation. |
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| ISSN: | 0974-0546 0974-0546 |