Frequency, delay and velocity analysis for intrinsic channel region of carbon nanotube field effect transistors
Gate wrap around field effect transistor is preferred for its good channel control. To study the high frequency behaviour of the device, parameters like cut-off frequency, transit or delay time, velocity are calculated and plotted. Double-walled and array of channels are considered in this work for...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Applied Science Innovations Private Limited
2014-03-01
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| Series: | Carbon: Science and Technology |
| Subjects: | |
| Online Access: | http://www.applied-science-innovations.com/cst-web-site/CST-6-2-2014/CST%20-%2091.pdf |