Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
In this work, we have theoretically investigated the intermixing effect in highly strained In<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs QW taking into consideration the composition profile change resulting from in-situ indium surface segregation. To study the impact of the segrega...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Institute for Condensed Matter Physics
2015-09-01
|
| Series: | Condensed Matter Physics |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.5488/CMP.18.33005 |