High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

Vertical structured Gallium nitride (GaN) p-n junction diodes with improved breakdown properties have been demonstrated using high-k dielectric passivation underneath the field plate. Simulation results at a reverse voltage of 1 kV showed that the maximum electric field near the mesa-etched p-n junc...

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Bibliographic Details
Main Authors: Michitaka Yoshino, Fumimasa Horikiri, Hiroshi Ohta, Yasuhiro Yamamoto, Tomoyoshi Mishima, Tohru Nakamura
Format: Article
Language:English
Published: MDPI AG 2016-03-01
Series:Electronics
Subjects:
GaN
high-k
diode
power semiconductor devices
Cellium oxide
Online Access:http://www.mdpi.com/2079-9292/5/2/15

Internet

http://www.mdpi.com/2079-9292/5/2/15

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