Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates. Self-heating induced device performances were extracted at different values drain bias voltage (VD) and dissipated DC power density (P...

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Bibliographic Details
Main Authors: K. Ranjan, S. Arulkumaran, G. I. Ng, A. Sandupatla
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
DC
Online Access:https://ieeexplore.ieee.org/document/8869814/