Formation of strain-induced quantum dots in gated semiconductor nanostructures
A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many unintentional dots (also known as disorder dots) which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-08-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4928320 |