Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Emerging Magnetic Random-Access Memory (MRAM) has shown a great potential to replace Static-RAM (SRAM) and Dynamic-RAM (DRAM) in the working memories including Cache and main memory. MRAM benefits from its high-density, fast speed, low standby power, and non-volatility, which provides the possibilit...

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Bibliographic Details
Main Authors: Liang Chang, Zhaohao Wang, Youguang Zhang, Weisheng Zhao
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Transpose operation
MRAM
SOT-MRAM
multi-port
1R1W
Online Access:https://ieeexplore.ieee.org/document/8792054/

Internet

https://ieeexplore.ieee.org/document/8792054/

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