Overview of FinFET device structure development

With the rapid development of integrated circuit technology, the size of devices continues to shrink. When the channel of the field effect transistor is shortened to 22 nm, the traditional planar field effect transistor no longer meets the development needs. FinFET is a new type of three-dimensional...

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Main Authors:	Xiong Qian, Ma Kui, Yang Fashun
Format:	Article
Language:	zho
Published:	National Computer System Engineering Research Institute of China 2021-01-01
Series:	Dianzi Jishu Yingyong
Subjects:	field effect transistor finfet device structure process
Online Access:	http://www.chinaaet.com/article/3000127855

id	doaj-621cdaae741a47a2924bf1a216fd64e0
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spelling	doaj-621cdaae741a47a2924bf1a216fd64e02021-05-21T05:33:53ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982021-01-01471212710.16157/j.issn.0258-7998.2005123000127855Overview of FinFET device structure developmentXiong Qian0Ma Kui1Yang Fashun2College of Big Data and Information Engineering，Guizhou University，Guiyang 550025，ChniaCollege of Big Data and Information Engineering，Guizhou University，Guiyang 550025，ChniaCollege of Big Data and Information Engineering，Guizhou University，Guiyang 550025，ChniaWith the rapid development of integrated circuit technology, the size of devices continues to shrink. When the channel of the field effect transistor is shortened to 22 nm, the traditional planar field effect transistor no longer meets the development needs. FinFET is a new type of three-dimensional device, which is currently widely researched and applied due to its good performance. It mainly introduces the basic structure and basic process flow of FinFET devices, as well as some improved FinFET device structures developed on the basic structure. Finally, combined with the reality, the future development of FinFET device structure is expected.http://www.chinaaet.com/article/3000127855field effect transistorfinfetdevice structureprocess
collection	DOAJ
language	zho
format	Article
sources	DOAJ
author	Xiong Qian Ma Kui Yang Fashun
spellingShingle	Xiong Qian Ma Kui Yang Fashun Overview of FinFET device structure development Dianzi Jishu Yingyong field effect transistor finfet device structure process
author_facet	Xiong Qian Ma Kui Yang Fashun
author_sort	Xiong Qian
title	Overview of FinFET device structure development
title_short	Overview of FinFET device structure development
title_full	Overview of FinFET device structure development
title_fullStr	Overview of FinFET device structure development
title_full_unstemmed	Overview of FinFET device structure development
title_sort	overview of finfet device structure development
publisher	National Computer System Engineering Research Institute of China
series	Dianzi Jishu Yingyong
issn	0258-7998
publishDate	2021-01-01
description	With the rapid development of integrated circuit technology, the size of devices continues to shrink. When the channel of the field effect transistor is shortened to 22 nm, the traditional planar field effect transistor no longer meets the development needs. FinFET is a new type of three-dimensional device, which is currently widely researched and applied due to its good performance. It mainly introduces the basic structure and basic process flow of FinFET devices, as well as some improved FinFET device structures developed on the basic structure. Finally, combined with the reality, the future development of FinFET device structure is expected.
topic	field effect transistor finfet device structure process
url	http://www.chinaaet.com/article/3000127855
work_keys_str_mv	AT xiongqian overviewoffinfetdevicestructuredevelopment AT makui overviewoffinfetdevicestructuredevelopment AT yangfashun overviewoffinfetdevicestructuredevelopment
_version_	1721432433790812160

Overview of FinFET device structure development

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