Overview of FinFET device structure development
With the rapid development of integrated circuit technology, the size of devices continues to shrink. When the channel of the field effect transistor is shortened to 22 nm, the traditional planar field effect transistor no longer meets the development needs. FinFET is a new type of three-dimensional...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2021-01-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000127855 |