Mechanics of silicon nitride thin-film stressors on a transistor-like geometry
To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The result...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4826545 |