Unscrambling for Subgap Density-of-States in Multilayered MoS<sub>2</sub> Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy

Unscrambling for Subgap Density-of-States in Multilayered MoS<sub>2</sub> Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy

Herein, we quantitatively analyze the evolution of the subgap density of states (DOSs) for multilayered molybdenum disulfide (m-MoS<sub>2</sub>) field effect transistors (FETs) with bilayered SiN<sub>x</sub>/SiO<sub>x</sub> gate dielectrics under positive bias str...

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Bibliographic Details
Main Authors: Ga Won Yang, Seung Gi Seo, Sungju Choi, Dae Hwan Kim, Sung Hun Jin
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
MoS₂
field effect transistor
density of state (DOS)
bias stress instability
TCAD simulation
Online Access:https://ieeexplore.ieee.org/document/9432962/

Internet

https://ieeexplore.ieee.org/document/9432962/

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