Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells
The effect of stacking on the near-infrared photoluminescence (NIR-PL) of InGaSb/GaSb quantum wells (QWs) which were inadvertently formed during an attempt to fabricate stacked InSb/GaSb quantum dots (QDs) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) are investigated in this w...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5037296 |