Electrical and morphological characterization of zinc-doped α- Fe2O3 thin films at different annealing temperature

α Fe2O3 is naturally n-type material. Zn was used to dope α-Fe2O3 (Zn: Fe2O3) to turn it into p-type. The thin film of Zn: Fe2O3 was obtained by spin coating a blend of Zinc acetate (Zn (CH3COO)2 2H2O) and FeCl2 after annealing the film in air. Zn-doped-Fe2O3 was found as a p-type semiconductor by H...

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Bibliographic Details
Main Authors: Ibn Shahjahann Arman, Md. Ataur Rahman, Abu Bakar Md. Ismail
Format: Article
Language:English
Published: Elsevier 2019-11-01
Series:Journal of Materials Research and Technology
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785419302352