Comprehensive characterization and analysis of hexagonal boron nitride on sapphire
Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN epitaxially grown using a carbon-free precursor on c-plane sapphire with a strong emphasis on material characterization and...
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2021-05-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0048578 |