Comprehensive characterization and analysis of hexagonal boron nitride on sapphire

Hexagonal boron nitride (h-BN) is considered as one of the most promising materials for next-generation quantum technologies. In this paper, we report bulk-like multilayer h-BN epitaxially grown using a carbon-free precursor on c-plane sapphire with a strong emphasis on material characterization and...

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Bibliographic Details
Main Authors: S. Saha, A. Rice, A. Ghosh, S. M. N. Hasan, W. You, T. Ma, A. Hunter, L. J. Bissell, R. Bedford, M. Crawford, S. Arafin
Format: Article
Language:English
Published: AIP Publishing LLC 2021-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0048578