Dopingless 1T DRAM: Proposal, Design, and Analysis
In this paper, we have proposed a dopingless 1T DRAM (DL-DRAM) that utilizes the charge plasma concept. The proposed device employs a misaligned double-gate architecture to store holes and differentiates between the two logic states. The source, drain, backgate, and frontgate workfunctions are optim...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8747403/ |