Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement

A novel hybrid approach integrating a MEMS switch with a gas discharge tube plasma cell to enhance switch survivability and isolation, especially at high incident power levels, is demonstrated. The theory of operation is discussed including consideration of the underlying plasma phenomena as well as...

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Main Authors: Zach Vander Missen, Abbas Semnani, Dimitrios Peroulis
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9199825/
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spelling doaj-5ef7f60b4f9d4e5f9675e4e00a3e28012021-03-30T03:46:20ZengIEEEIEEE Access2169-35362020-01-01817310317311110.1109/ACCESS.2020.30247609199825Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation EnhancementZach Vander Missen0https://orcid.org/0000-0003-4785-4591Abbas Semnani1https://orcid.org/0000-0003-4284-3914Dimitrios Peroulis2School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USADepartment of Electrical Engineering and Computer Science, The University of Toledo, Toledo, OH, USASchool of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USAA novel hybrid approach integrating a MEMS switch with a gas discharge tube plasma cell to enhance switch survivability and isolation, especially at high incident power levels, is demonstrated. The theory of operation is discussed including consideration of the underlying plasma phenomena as well as the practical integration details. Measurement of a fabricated prototype is presented. Discussion of measurement challenges and potential solutions is accompanied by detailed explanations of measurement practice. Measurements provide insights into applied RF plasmas not present in the body of literature. Wideband enhancement of isolation by more than 10 dB at 50 W incident power is observed in a quasi-absorptive mode with increasing isolation over power. No penalty to the excellent linearity of MEMS switches is detected with a measured IIP3 of 75.3 dBm. Advantages in linearity as compared to semiconductor-based power limiting solutions are shown and demonstrate state-of-the-art performance. An incremental insertion loss of less than 0.2 dB with a return loss better than 12.5 dB is reported. Measurement of the effects on MEMS switch timing parameters as well as time domain characterization of the plasma breakdown is included.https://ieeexplore.ieee.org/document/9199825/High-powerlinearityMEMSplasmaswitch
collection DOAJ
language English
format Article
sources DOAJ
author Zach Vander Missen
Abbas Semnani
Dimitrios Peroulis
spellingShingle Zach Vander Missen
Abbas Semnani
Dimitrios Peroulis
Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement
IEEE Access
High-power
linearity
MEMS
plasma
switch
author_facet Zach Vander Missen
Abbas Semnani
Dimitrios Peroulis
author_sort Zach Vander Missen
title Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement
title_short Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement
title_full Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement
title_fullStr Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement
title_full_unstemmed Plasma-Based Power Limitation for Highly Linear MEMS Switch Protection and Isolation Enhancement
title_sort plasma-based power limitation for highly linear mems switch protection and isolation enhancement
publisher IEEE
series IEEE Access
issn 2169-3536
publishDate 2020-01-01
description A novel hybrid approach integrating a MEMS switch with a gas discharge tube plasma cell to enhance switch survivability and isolation, especially at high incident power levels, is demonstrated. The theory of operation is discussed including consideration of the underlying plasma phenomena as well as the practical integration details. Measurement of a fabricated prototype is presented. Discussion of measurement challenges and potential solutions is accompanied by detailed explanations of measurement practice. Measurements provide insights into applied RF plasmas not present in the body of literature. Wideband enhancement of isolation by more than 10 dB at 50 W incident power is observed in a quasi-absorptive mode with increasing isolation over power. No penalty to the excellent linearity of MEMS switches is detected with a measured IIP3 of 75.3 dBm. Advantages in linearity as compared to semiconductor-based power limiting solutions are shown and demonstrate state-of-the-art performance. An incremental insertion loss of less than 0.2 dB with a return loss better than 12.5 dB is reported. Measurement of the effects on MEMS switch timing parameters as well as time domain characterization of the plasma breakdown is included.
topic High-power
linearity
MEMS
plasma
switch
url https://ieeexplore.ieee.org/document/9199825/
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AT abbassemnani plasmabasedpowerlimitationforhighlylinearmemsswitchprotectionandisolationenhancement
AT dimitriosperoulis plasmabasedpowerlimitationforhighlylinearmemsswitchprotectionandisolationenhancement
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