Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique
A hydrogen atom, characterized by one unpaired electron and the smallest atomic radius, underlies the operations of various solid-state devices such as transistors, capacitors, solar cells, etc. Given its specific character as donor impurity in oxides, hydrogen may also facilitate efficient electron...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5055302 |