Ferromagnetism in undoped One-dimensional GaN Nanowires
We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10−8 mbar. Despite a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4878976 |