Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides

We propose an approach to monolithically integrate bulk germanium (Ge) or Ge quantum wells with silicon-on-insulator (SOI) waveguides through selective epitaxy and direct butt coupling. To prevent lateral epitaxial growth during the selective epitaxy, a dielectric insulating spacer layer is deposite...

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Bibliographic Details
Main Authors: S. Ren, T. I. Kamins, D. A. B. Miller
Format: Article
Language:English
Published: IEEE 2011-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/5982074/