Faraday-cage-assisted etching of suspended gallium nitride nanostructures

Faraday-cage-assisted etching of suspended gallium nitride nanostructures

We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut...

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Bibliographic Details
Main Authors: Geraint P. Gough, Angela D. Sobiesierski, Saleem Shabbir, Stuart Thomas, Daryl M. Beggs, Robert A. Taylor, Anthony J. Bennett
Format: Article
Language:English
Published: AIP Publishing LLC 2020-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0007947
Description
Summary:We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.
ISSN:2158-3226

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