Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device....
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9040524/ |