Study of density of interface states in MOS structure with ultrathin NAOS oxide

Study of density of interface states in MOS structure with ultrathin NAOS oxide

Bibliographic Details
Main Authors: Jurečka Stanislav, Kobayashi Hikaru, Kim Woo-Byoung, Takahashi Masao, Pinčík Emil
Format: Article
Language:English
Published: De Gruyter 2012-02-01
Series:Open Physics
Subjects:
semiconductor
density of states
interface states
mos
capacitance
Online Access:https://doi.org/10.2478/s11534-011-0092-6
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spelling doaj-5d7bcadf6e8141d5929f6b9d5b31d3182021-09-05T14:01:40ZengDe GruyterOpen Physics2391-54712012-02-0110121021710.2478/s11534-011-0092-6Study of density of interface states in MOS structure with ultrathin NAOS oxideJurečka Stanislav0Kobayashi Hikaru1Kim Woo-Byoung2Takahashi Masao3Pinčík Emil4DEF FEE Žilina University, Nálepku 1390, 03101, Liptovský Mikuláš, SlovakiaDSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, JapanDSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, JapanDSMP ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, JapanInstitute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakiahttps://doi.org/10.2478/s11534-011-0092-6semiconductordensity of statesinterface statesmoscapacitance
collection DOAJ
language English
format Article
sources DOAJ
author Jurečka Stanislav
Kobayashi Hikaru
Kim Woo-Byoung
Takahashi Masao
Pinčík Emil
spellingShingle Jurečka Stanislav
Kobayashi Hikaru
Kim Woo-Byoung
Takahashi Masao
Pinčík Emil
Study of density of interface states in MOS structure with ultrathin NAOS oxide
Open Physics
semiconductor
density of states
interface states
mos
capacitance
author_facet Jurečka Stanislav
Kobayashi Hikaru
Kim Woo-Byoung
Takahashi Masao
Pinčík Emil
author_sort Jurečka Stanislav
title Study of density of interface states in MOS structure with ultrathin NAOS oxide
title_short Study of density of interface states in MOS structure with ultrathin NAOS oxide
title_full Study of density of interface states in MOS structure with ultrathin NAOS oxide
title_fullStr Study of density of interface states in MOS structure with ultrathin NAOS oxide
title_full_unstemmed Study of density of interface states in MOS structure with ultrathin NAOS oxide
title_sort study of density of interface states in mos structure with ultrathin naos oxide
publisher De Gruyter
series Open Physics
issn 2391-5471
publishDate 2012-02-01
topic semiconductor
density of states
interface states
mos
capacitance
url https://doi.org/10.2478/s11534-011-0092-6
work_keys_str_mv AT jureckastanislav studyofdensityofinterfacestatesinmosstructurewithultrathinnaosoxide
AT kobayashihikaru studyofdensityofinterfacestatesinmosstructurewithultrathinnaosoxide
AT kimwoobyoung studyofdensityofinterfacestatesinmosstructurewithultrathinnaosoxide
AT takahashimasao studyofdensityofinterfacestatesinmosstructurewithultrathinnaosoxide
AT pincikemil studyofdensityofinterfacestatesinmosstructurewithultrathinnaosoxide
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