Study of density of interface states in MOS structure with ultrathin NAOS oxide

Study of density of interface states in MOS structure with ultrathin NAOS oxide

Bibliographic Details
Main Authors: Jurečka Stanislav, Kobayashi Hikaru, Kim Woo-Byoung, Takahashi Masao, Pinčík Emil
Format: Article
Language:English
Published: De Gruyter 2012-02-01
Series:Open Physics
Subjects:
semiconductor
density of states
interface states
mos
capacitance
Online Access:https://doi.org/10.2478/s11534-011-0092-6

Internet

https://doi.org/10.2478/s11534-011-0092-6

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