Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
Abstract The AlOx-based resistive switching memory device is fabricated by an oxidation diffusion process that involves depositing an Al film on an ITO substrate and annealing at 400 °C in a vacuum. An AlOx interface layer with a thickness of ~ 20 nm is formed as a resistance switching layer. Bipola...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-019-3229-y |