Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

Temperature Effect on Al/p-CuInS2/SnO2(F) Schottky Diodes

In this paper, Schottky diodes (SDs) obtained by evaporated thin films of aluminum on pulverized p-CuInS2/SnO2:F have been studied using J-V-T characteristics in a temperature range of 200-340K. These characteristics show that aluminum acts as a rectifier metal-semiconductor contact. Characteristic...

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Bibliographic Details
Main Authors: T. Ben Nasrallah, D. Mahboub, M. Jemai, S. Belgacem
Format: Article
Language:English
Published: D. G. Pylarinos 2019-10-01
Series:Engineering, Technology & Applied Science Research
Subjects:
CuInS2
thin films
spray pyrolysis
Schottky diodes
Lambert function
Online Access:https://etasr.com/index.php/ETASR/article/view/3072

Internet

https://etasr.com/index.php/ETASR/article/view/3072

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