Investigation of nitride lateral Schottky barrier diodes based on InGaN channel heterostructures
In this work, nitride lateral Schottky barrier diodes (SBDs) are manufactured on InGaN channel heterostructures, and the superior performances are investigated in detail. Due to the decent electron confinement of InGaN channel heterostructures, a high current on/off ratio of 107 is achieved for the...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5129112 |