Engineering Method for Tailoring Electrical Characteristics in TiN/TiOx/HfOx/Au Bi-Layer Oxide Memristive Devices

Memristive devices have led to an increased interest in neuromorphic systems. However, different device requirements are needed for the multitude of computation schemes used there. While linear and time-independent conductance modulation is required for machine learning, non-linear and time-dependen...

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Bibliographic Details
Main Authors: Seongae Park, Stefan Klett, Tzvetan Ivanov, Andrea Knauer, Joachim Doell, Martin Ziegler
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-04-01
Series:Frontiers in Nanotechnology
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fnano.2021.670762/full