Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy
The objective of the study is a growth of SiC/(SiC)1−x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1−x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation...
Main Authors: | Tománek P., Bilalov B., Korostylev E., Dallaeva D. |
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Format: | Article |
Language: | English |
Published: |
EDP Sciences
2013-05-01
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Series: | EPJ Web of Conferences |
Online Access: | http://dx.doi.org/10.1051/epjconf/20134800002 |
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