Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

The objective of the study is a growth of SiC/(SiC)1−x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1−x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation...

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Bibliographic Details
Main Authors: Tománek P., Bilalov B., Korostylev E., Dallaeva D.
Format: Article
Language:English
Published: EDP Sciences 2013-05-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/20134800002