Epitaxy of III-Nitrides on β-Ga<sub>2</sub>O<sub>3</sub> and Its Vertical Structure LEDs

Epitaxy of III-Nitrides on β-Ga<sub>2</sub>O<sub>3</sub> and Its Vertical Structure LEDs

&#946;-Ga<sub>2</sub>O<sub>3</sub>, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (&gt;80%) in blue, and UVA (400&#8211;320 nm) as well as UVB (320&#8211;280 nm) regions, has great potential as the su...

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Bibliographic Details
Main Authors: Weijiang Li, Xiang Zhang, Ruilin Meng, Jianchang Yan, Junxi Wang, Jinmin Li, Tongbo Wei
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Micromachines
Subjects:
β-Ga<sub>2</sub>O<sub>3</sub>
III-Nitrides
monoclinic
hexagonal arrangement
high-power
current distribution
vertical structure LED
Online Access:https://www.mdpi.com/2072-666X/10/5/322

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https://www.mdpi.com/2072-666X/10/5/322

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