Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film

Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film

The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates b...

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Bibliographic Details
Main Authors:	Jian-Yang Lin, Chia-Lin Wu
Format:	Article
Language:	English
Published:	Hindawi Limited 2014-01-01
Series:	Advances in Materials Science and Engineering
Online Access:	http://dx.doi.org/10.1155/2014/425085

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