Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates b...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2014-01-01
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Series: | Advances in Materials Science and Engineering |
Online Access: | http://dx.doi.org/10.1155/2014/425085 |