Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film

Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film

The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates b...

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Main Authors: Jian-Yang Lin, Chia-Lin Wu
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2014/425085
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spelling doaj-5afccbf234a742bfac4a6e79c072fe3b2020-11-24T22:54:29ZengHindawi LimitedAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/425085425085Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 FilmJian-Yang Lin0Chia-Lin Wu1Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliou 64002, TaiwanGraduate School of Engineering Science & Technology, National Yunlin University of Science and Technology, Douliou 64002, TaiwanThe electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.http://dx.doi.org/10.1155/2014/425085
collection DOAJ
language English
format Article
sources DOAJ
author Jian-Yang Lin
Chia-Lin Wu
spellingShingle Jian-Yang Lin
Chia-Lin Wu
Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
Advances in Materials Science and Engineering
author_facet Jian-Yang Lin
Chia-Lin Wu
author_sort Jian-Yang Lin
title Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
title_short Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
title_full Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
title_fullStr Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
title_full_unstemmed Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
title_sort bipolar switching characteristics of rram cells with cabi4ti4o15 film
publisher Hindawi Limited
series Advances in Materials Science and Engineering
issn 1687-8434
1687-8442
publishDate 2014-01-01
description The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.
url http://dx.doi.org/10.1155/2014/425085
work_keys_str_mv AT jianyanglin bipolarswitchingcharacteristicsofrramcellswithcabi4ti4o15film
AT chialinwu bipolarswitchingcharacteristicsofrramcellswithcabi4ti4o15film
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