Natural surface oxidation consideration in first principles modeling of the X-ray absorption near edge fine structure of silicon

First-principles calculations of the electronic structure of crystalline silicon and its dioxide were performed on the basis of the density functional theory. The full-potential linearized augmented plane waves method was used with the generalized gradient approximation for the exchange-correlation...

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Bibliographic Details
Main Authors: S.I. Kurganskii, O.A. Dezhina, M.D. Manyakin, E.V. Parinova, D.A. Koyuda, S.Yu. Turishchev
Format: Article
Language:English
Published: Elsevier 2021-02-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379720321884