Physicotechnological aspects of low-voltage suppressors developement on the silicon base
It is shown that by arsenic diffusion alloying of silicon plates in conditions of deaerated quartz ampoule the most effective is the use of a compound source in the form of crystal arsenic and silicon powder of boron-implanted silicon grade with base impurity (boron) concentration not less than the...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2010-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2010/5-6_2010/pdf/07.zip |