A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers

Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The Schottky barrier height (Φ<sub>B</su...

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Bibliographic Details
Main Authors: Pei-Te Lin, Jia-Wei Chang, Syuan-Ruei Chang, Zhong-Kai Li, Wei-Zhi Chen, Jui-Hsuan Huang, Yu-Zhen Ji, Wen-Jeng Hsueh, Chun-Ying Huang
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/11/3/259