A Stable and Efficient Pt/n-Type Ge Schottky Contact That Uses Low-Cost Carbon Paste Interlayers
Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The Schottky barrier height (Φ<sub>B</su...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-03-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/11/3/259 |