Leakage Immune Modified Pass Transistor Based 8T SRAM Cell in Subthreshold Region
The paper presents a novel 8T SRAM cell with access pass gates replaced with modified PMOS pass transistor logic. In comparison to 6T SRAM cell, the proposed cell achieves 3.5x higher read SNM and 2.4x higher write SNM with 16.6% improved SINM (static current noise margin) distribution at the expen...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
|
| Series: | International Journal of Reconfigurable Computing |
| Online Access: | http://dx.doi.org/10.1155/2015/749816 |