Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method
Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2013-12-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2013/6_2013/pdf/07.zip |