Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si grad...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
L.N. Gumilyov Eurasian National University
2018-12-01
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| Series: | Eurasian Journal of Physics and Functional Materials |
| Subjects: | |
| Online Access: | http://ephys.kz/files/2018-12-24_0_Vol2_no4%20(9).pdf |