Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

by I.R. Bekpulatov, A.S. Rysbaev, Sh.Kh. Dzhuraev, A.S. Kasymov
Published 2018-12-01

Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7 -Si<Mn>-Mn4Si7 and Mn4Si7 -Si<Mn>-M

by T.S. Kamilov, A.S. Rysbaev, V.V. Klechkovskaya, A.S. Orekhov, Sh.Kh. Dzhuraev, A.S. Kasymov
Published 2018-12-01