Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si grad...

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Main Authors:	I.R. Bekpulatov, A.S. Rysbaev, Sh.Kh. Dzhuraev, A.S. Kasymov
Format:	Article
Language:	English
Published:	L.N. Gumilyov Eurasian National University 2018-12-01
Series:	Eurasian Journal of Physics and Functional Materials
Subjects:	method of high-phase ion implantation temperature-sensitive elements sensor annealing
Online Access:	http://ephys.kz/files/2018-12-24_0_Vol2_no4%20(9).pdf

id	doaj-57a592ae235a47e4aa3a60f7df0705fd
record_format	Article
spelling	doaj-57a592ae235a47e4aa3a60f7df0705fd2020-11-24T21:29:14ZengL.N. Gumilyov Eurasian National UniversityEurasian Journal of Physics and Functional Materials2522-98692616-85372018-12-012436737610.29317/ejpfm.2018020409Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)I.R. Bekpulatov0A.S. Rysbaev1Sh.Kh. Dzhuraev2A.S. Kasymov3Tashkent State Technical University, UzbekistanTashkent State Technical University, UzbekistanTermez State University, UzbekistanTermez State University, UzbekistanIn the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.http://ephys.kz/files/2018-12-24_0_Vol2_no4%20(9).pdfmethod of high-phase ion implantationtemperature-sensitive elementssensorannealing
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	I.R. Bekpulatov A.S. Rysbaev Sh.Kh. Dzhuraev A.S. Kasymov
spellingShingle	I.R. Bekpulatov A.S. Rysbaev Sh.Kh. Dzhuraev A.S. Kasymov Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111) Eurasian Journal of Physics and Functional Materials method of high-phase ion implantation temperature-sensitive elements sensor annealing
author_facet	I.R. Bekpulatov A.S. Rysbaev Sh.Kh. Dzhuraev A.S. Kasymov
author_sort	I.R. Bekpulatov
title	Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
title_short	Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
title_full	Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
title_fullStr	Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
title_full_unstemmed	Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
title_sort	development of thermal sensors by implantation ions p+ and b+ in different sides of si(111)
publisher	L.N. Gumilyov Eurasian National University
series	Eurasian Journal of Physics and Functional Materials
issn	2522-9869 2616-8537
publishDate	2018-12-01
description	In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied.
topic	method of high-phase ion implantation temperature-sensitive elements sensor annealing
url	http://ephys.kz/files/2018-12-24_0_Vol2_no4%20(9).pdf
work_keys_str_mv	AT irbekpulatov developmentofthermalsensorsbyimplantationionspandbindifferentsidesofsi111 AT asrysbaev developmentofthermalsensorsbyimplantationionspandbindifferentsidesofsi111 AT shkhdzhuraev developmentofthermalsensorsbyimplantationionspandbindifferentsidesofsi111 AT askasymov developmentofthermalsensorsbyimplantationionspandbindifferentsidesofsi111
_version_	1725966630525075456

Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

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