Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)
In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si grad...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
L.N. Gumilyov Eurasian National University
2018-12-01
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| Series: | Eurasian Journal of Physics and Functional Materials |
| Subjects: | |
| Online Access: | http://ephys.kz/files/2018-12-24_0_Vol2_no4%20(9).pdf |
| Summary: | In the method of high-phase ion implantation of P + and B + to different sides of monocrystal silicon we obtained p-i-n- structure, which has a high thermal sensitivity of 2.3 mV/K in a broad band temperature of (20 ÷ 550) K. We studied the distribution profile P and B atoms implanted in the Si gradually decreasing energy. The effect of the subsequent thermal and annealing IR profile on the distribution of the atoms and the characteristics of the temperature sensor was studied. |
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| ISSN: | 2522-9869 2616-8537 |