| Summary: | We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm<sup>2</sup>/V·s with the carrier concentration near 2 × 10<sup>17</sup> cm<sup>−3</sup>. However, if not doped with silicon, both Ga<sub>2</sub>O<sub>3</sub>:In and Ga<sub>2</sub>O<sub>3</sub> are highly resistive. Optical and structural characterization techniques such as X-ray, transmission electron microscope, and photoluminescence, reveal no significant incorporation of indium into the superlattice materials, which suggests the indium plays a role of a surfactant passivating electron trapping defect levels.
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