Highly Conductive Co-Doped Ga<sub>2</sub>O<sub>3</sub>:Si-In Grown by MOCVD

Highly Conductive Co-Doped Ga<sub>2</sub>O<sub>3</sub>:Si-In Grown by MOCVD

We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm<sup...

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Bibliographic Details
Main Authors: Junhee Lee, Honghyuk Kim, Lakshay Gautam, Manijeh Razeghi
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Coatings
Subjects:
MOCVD
metal oxide
high electrical performance
doping with silicon
Ga<sub>2</sub>O<sub>3</sub> polymorph
Online Access:https://www.mdpi.com/2079-6412/11/3/287

Internet

https://www.mdpi.com/2079-6412/11/3/287

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