Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

Ba(Mg1∕3Nb2∕3)O3 (BMN) doped and undoped Ba0.45Sr0.55TiO3 (BST) thin films were deposited via radio frequency magnetron sputtering on Pt/TiO2/SiO2/Al2O3 substrates. The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with redu...

Full description

Bibliographic Details
Main Authors: Fikadu Alema, Konstantin Pokhodnya
Format: Article
Language:English
Published: World Scientific Publishing 2015-12-01
Series:Journal of Advanced Dielectrics
Subjects:
Barium strontium titanate
sputtering
ferroelectric thin film
tunability
leakage current
permittivity
loss
figure of merit
defect dipole
Online Access:http://www.worldscientific.com/doi/pdf/10.1142/S2010135X15500307

Internet

http://www.worldscientific.com/doi/pdf/10.1142/S2010135X15500307

Similar Items