Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Abstract Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in whic...

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Main Authors:	Eunah Ko, Jaemin Shin, Changhwan Shin
Format:	Article
Language:	English
Published:	SpringerOpen 2018-01-01
Series:	Nano Convergence
Subjects:	Steep switching device Negative capacitance Phase FET Low power application Field effect transistor
Online Access:	http://link.springer.com/article/10.1186/s40580-018-0135-4

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record_format	Article
spelling	doaj-564e887026b541c8b665cf15e87913a72020-11-25T01:27:30ZengSpringerOpenNano Convergence2196-54042018-01-01511910.1186/s40580-018-0135-4Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistorsEunah Ko0Jaemin Shin1Changhwan Shin2Department of Electrical and Computer Engineering, University of SeoulDepartment of Electrical and Computer Engineering, University of SeoulDepartment of Electrical and Computer Engineering, University of SeoulAbstract Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail.http://link.springer.com/article/10.1186/s40580-018-0135-4Steep switching deviceNegative capacitancePhase FETLow power applicationField effect transistor
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Eunah Ko Jaemin Shin Changhwan Shin
spellingShingle	Eunah Ko Jaemin Shin Changhwan Shin Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors Nano Convergence Steep switching device Negative capacitance Phase FET Low power application Field effect transistor
author_facet	Eunah Ko Jaemin Shin Changhwan Shin
author_sort	Eunah Ko
title	Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
title_short	Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
title_full	Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
title_fullStr	Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
title_full_unstemmed	Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
title_sort	steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
publisher	SpringerOpen
series	Nano Convergence
issn	2196-5404
publishDate	2018-01-01
description	Abstract Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance FET), in which a threshold selector is added to an electrode (e.g., source or drain) of conventional field effect transistor. Although the concept of the aforementioned two devices was presented more or less recently, numerous studies have been published. In this review paper, by reviewing the published studies over the last decade, we shall de-brief and discuss the history and the future perspectives of NCFET/phase FET, respectively. The background, experimental investigation, and future direction for developing the aforementioned two representative steep switching devices (i.e., NCFET and phase FET/negative resistance FET) are to be discussed in detail.
topic	Steep switching device Negative capacitance Phase FET Low power application Field effect transistor
url	http://link.springer.com/article/10.1186/s40580-018-0135-4
work_keys_str_mv	AT eunahko steepswitchingdevicesforlowpowerapplicationsnegativedifferentialcapacitanceresistancefieldeffecttransistors AT jaeminshin steepswitchingdevicesforlowpowerapplicationsnegativedifferentialcapacitanceresistancefieldeffecttransistors AT changhwanshin steepswitchingdevicesforlowpowerapplicationsnegativedifferentialcapacitanceresistancefieldeffecttransistors
_version_	1725105075460767744

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

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