Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Abstract Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in whic...

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Bibliographic Details
Main Authors: Eunah Ko, Jaemin Shin, Changhwan Shin
Format: Article
Language:English
Published: SpringerOpen 2018-01-01
Series:Nano Convergence
Subjects:
Steep switching device
Negative capacitance
Phase FET
Low power application
Field effect transistor
Online Access:http://link.springer.com/article/10.1186/s40580-018-0135-4

Internet

http://link.springer.com/article/10.1186/s40580-018-0135-4

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