Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed us...

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Bibliographic Details
Main Authors: Anna Reszka, Krzysztof P. Korona, Stanislav Tiagulskyi, Henryk Turski, Uwe Jahn, Slawomir Kret, Rafał Bożek, Marta Sobanska, Zbigniew R. Zytkiewicz, Bogdan J. Kowalski
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Electronics
Subjects:
GaN
Online Access:https://www.mdpi.com/2079-9292/10/1/45